DIM200PHM33-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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Lista de partido
DIM200PHM33-A000 Datasheet PDF : 10 Pages
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DIM200PHM33-A000
400
Tj = 25˚C
Tj = 125˚C
350
300
250
200
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
500
400
Chip
300
Module
200
100
Tcase = 125˚C
Vge = ±15V
Rg(min) = 10Ω
0
0
500 1000
1500
2000
2500
3000
Collector emitter voltage, Vce - (V)
3500
Fig. 8 Reverse bias safe operating area
400
Tj = 125˚C
350
300
250
200
1000
100
IC(max) DC
10
tp = 50µs
150
100
1
50
0
0 500 1000 1500 2000 2500 3000 3500
Reverse voltage, VR - (V)
Tvj = 125˚C, Tc = 80˚C
0.1
1
10
100
1000
Collector emitter voltage, Vce (V)
10000
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Forward bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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