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GP1200ESM33

High Reliability Single Switch IGBT Module

Dynex Semiconductor 

GP1200ESM33

ELECTRICAL CHARACTERISTICS

T = 25˚C unless stated otherwise.

case

Symbol

Parameter

ICES

Collector cut-off current

IGES

VGE(TH)

VCE(sat)

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

IF

Diode forward current

IFM

Diode maximum forward current

VF

Diode forward voltage

Cies

Input capacitance

LM

Module inductance

Test Conditions

Min. Typ. Max. Units

VGE = 0V, VCE = VCES

-

VGE = 0V, VCE = VCES, Tcase = 125˚C

-

VGE = ±20V, VCE = 0V

-

I = 120mA, V = V

4.5

C

GE

CE

VGE = 15V, IC = 1200A

-

VGE = 15V, IC = 1200A, , Tcase = 125˚C

-

DC

-

-

3

mA

-

100 mA

-

12 µA

5.5

6.5

V

3.4

4.3

V

4.3

5

V

-

1200 A

t = 1ms

p

IF = 1200A

IF = 1200A, Tcase = 125˚C

VCE = 25V, VGE = 0V, f = 1MHz

-

-

-

2400 A

-

2.3

2.9

V

-

2.4

3

V

-

300

-

nF

-

10

-

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/9

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