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CHA2391-99F

36-40GHz Very Low Noise Amplifier

United Monolithic Semiconductors 

CHA2391

36-40GHz Very Low Noise Amplifier

Electrical Characteristics

Tamb = +25°C,

Bias Conditions:Vd = +4V

Symbol

Parameter

Fop Operating frequency range

G

Gain (1)

∆G

Gain flatness (1)

NF Noise figure (1)

VSWRin Input VSWR (1)

VSWRout Ouput VSWR (1)

IP3

P1dB

3rd order intercept point

Output power at 1dB gain compression

Vd

DC Voltage

Vd

Vg

Id

Drain bias current (2)

Min Typ Max Unit

36

40 Ghz

12

15

dB

± 0.5 ± 1.0 dB

2.5

3

dB

3.0:1

3.0:1

20

dBm

12

dBm

4

4.5

V

-2 -0.25 +0.4

45

mA

(1) These values are representative of on-wafer measurements that are made without bonding wires

at the RF ports.When the chip is attached with typical 0.15nH input and output bonding wires, the

indicated parameters should be improved.

(2) 45 mA is the typical bias current used for on wafer measurements, with Vg1= Vg2.

For optimum noise figure, the bias current could be reduced down to 30 mA, adjusting the

Vg1,2 voltage.

Absolute Maximum Ratings (1)

Tamb = +25°C

Symbol

Vd

Vg

Vdg

Pin

Pin

Top

Tsg

Parameter

Drain bias voltage

Gate bias voltage

Maximum drain to gate voltage (Vd-Vg)

Maximum peak input power overdrive (2)

Maximum continuous input power

Operating temperature range

Storage temperature range

Values

5.0

-2.0 to +0.4

+5.0

+15

+1

-40 to +85

-55 to +125

Unit

V

V

V

dBm

dBm

°C

°C

(1) Operation of this device above anyone of these paramaters may cause permanent damage.

(2) Duration < 1s.

Ref. : DSCHA23912240 -28-Aug.-02

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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