DS1216 Ver la hoja de datos (PDF) - Dallas Semiconductor -> Maxim Integrated
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DS1216
Dallas Semiconductor -> Maxim Integrated
DS1216 Datasheet PDF : 15 Pages
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CAPACITANCE
(TA = +25°C)
PARAMETER
Input Capacitance
Output Capacitance
Expected Data Retention
SYMBOL
CIN
COUT
tDR
MIN
AC ELECTRICAL CHARACTERISTICS
(VCC = 4.5V to 5.5V, TA = 0°C to +70°C.)
PARAMETER
SYMBOL MIN
Read Cycle Time
CE Access Time
OE Access Time
CE to Output Low-Z
OE to Output Low-Z
CE to Output High-Z
OE to Output High-Z
tRC
75
tCO
tOE
tCOE
6
tOEE
6
tOD
tODO
Address Setup Time (ROM)
tAS
20
Address Hold Time (ROM)
tAH
Read Recovery
tRR
15
Write Cycle Time
tWC
75
Write Pulse Width
tWP
75
Write Recovery
tWR
15
Data Setup Time
tDS
35
Data Hold Time
CE Pulse Width
RST Pulse Width
CE Propagation Delay
CE High to Power-Fail
tDH
0
tCW
65
tRST
75
tPD
tPF
DS1216 SmartWatch RAM/SmartWatch ROM
TYP
MAX
5
7
10
UNITS
pF
pF
years
NOTES
14
TYP
MAX
65
65
30
30
10
6
0
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
11
12
9
10
10
7
10 of 15
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