DS1230AB Ver la hoja de datos (PDF) - Dallas Semiconductor -> Maxim Integrated
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DS1230AB Datasheet PDF : 12 Pages
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CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN
TYP
5
5
MAX
10
10
DS1230Y/AB
(tA=25°C)
UNITS NOTES
pF
pF
AC ELECTRICAL
CHARACTERISTICS
PARAMETER SYMBOL
(VCC=5V ±=5% for DS1230AB)
(tA: See Note 10) (VCC=5V ±=10% for DS1230Y)
DS1230AB-70 DS1230AB-85 DS1230AB-100
DS1230Y-70 DS1230Y-85 DS1230Y-100 UNITS NOTES
MIN MAX MIN MAX MIN MAX
Read Cycle
tRC
70
85
100
ns
Time
Access Time
tACC
70
85
100
ns
OE to Output
tOE
Valid
35
45
50
ns
CE to Output
tCO
Valid
70
85
100
ns
OE or CE to
tCOE
5
5
5
Output Active
ns
5
Output High Z
tOD
from
Deselection
25
30
35
ns
5
Output Hold
tOH
5
5
5
ns
from Address
Change
Write Cycle
tWC
70
85
100
ns
Time
Write Pulse
tWP
55
65
75
Width
ns
3
Address Setup
tAW
0
0
0
ns
Time
Write Recovery tWR1
5
5
5
Time
tWR2
15
15
15
ns
12
13
Output High Z
from WE
tODW
25
30
35
ns
5
Output Active
tOEW
5
5
5
from WE
ns
5
Data Setup
tDS
30
35
40
Time
ns
4
Data Hold
tDH1
0
0
0
Time
tDH2
10
10
10
ns
12
13
4 of 12
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