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DS135A

Diffused Junction Type Silicon Diode 1.0A Power Rectifier

SANYO -> Panasonic 

Ordering number : ENA0150

DS135A

SANYO Semiconductors

DATA SHEET

DS135A

Diffused Junction Type Silicon Diode

1.0A Power Rectifier

Features

• Plastic molded structure.

• Peak reverse voltage : VRM= --100 to --400V.

• Average output current : IO=1.0A.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Peak Reverse Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Symbol

VRM

IO

IFSM

Tj

Tstg

Conditions

Ta=60°C

50Hz sine wave, 1cycle

Electrical Characteristics at Ta=25°C

Parameter

Forward Voltage

Reverse Current

Symbol

VF

IR

Conditions

IF=1.0A

VR : At each VRM

DS135AE

DS135AD

DS135AC

Unit

--100

--200

--400 V

1.0

A

45

A

150

°C

--40 to +150

°C

Ratings

Unit

min

typ

max

1.0

V

--10

µA

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer's products or

equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71107RC TI IM TB-00001905 No. A0150-1/3

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