DTC314T Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Lista de partido
DTC314T Datasheet PDF : 4 Pages
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Transistors
DTC314TU / DTC314TK / DTC314TS
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Limits
Symbol
Unit
DTC314TU DTC314TK DTC314TS
VCBO
30
V
VCEO
15
V
VEBO
5
V
IC
600
mA
PC
200
300
mW
Tj
150
°C
Tstg
−55 to +150
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Output "ON" resistance
∗ Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT ∗
Ron
Min.
30
15
5
−
−
−
100
7
−
−
Typ.
−
−
−
−
−
40
250
10
200
1.25
Max.
−
−
−
0.5
0.5
80
600
13
−
−
Unit
V
V
V
µA
µA
mV
−
kΩ
MHz
Ω
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=20V
VEB=4V
IC/IB=50mA/2.5mA
VCE=5V, IC=50mA
−
VCE=10V, IE=−50mA, f=100MHz
VI=7V, RL=1kΩ, f=1kHz
Rev.B
2/3
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