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L6690

INFRARED PULSED LASER DIODE

Hamamatsu Photonics 

■FEATURES

●High duty ratio (DR≦2.5%)

●High speed rise time (tr=0.5 ns typ.)

■APPLICATIONS

●Laser rader

●Range finder

●Excitation light source

●Optical trigger

●Security barrier

INFRARED PULSED LASER DIODE

L6690

Figure 1: Dimensional Outline (Unit: mm)

Glass Window

LD Chip

9.0

+0

-0.1

5.7 ± 0.2

2.8 ± 0.3

■ABSOLUTE MAXIMUM RATINGS

Parameter

Pulsed Foward Current

Symbol

IFP

Value

3

Unit

A

Reverse Voltage

VR

Pulsed Radiant Output Power φep

2

V

3

W

Pulse Duration (FWHM)

Duty Ratio

tw

130

ns

DR

2.5

%

Operating Temperature

Storage Temperature

Top -35 to +80 ℃

Tstg -40 to +85 ℃

0.45

2.54

Side View

1.0

Common to Case

LD Cathode

PD Anode

Bottom View

(Pin Connection)

PD

LD

LD Cathode

PD Anode

Common to Case

■ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25℃)

Parameter

Pulsed Radiant Power

Peak Emission Wavelength

Spectral Radiation Half Bandwidth

Forward Voltage

Rise Time

Beam Spread Angle : Parallel

: Vertical

Lasing Threshold Current

Monitor PD Current

Symbol

φep

λp

Δλ

VF

tr

θ//

θ⊥

Ith

Im

Condition

IFP=2.5A

FWHM

IFP=2.5A

FWHM

IFP=2.5A

IFP=2.5A

Min.

1.8

-

-

-

-

6

27

-

-

Typ.

-

870

3

2.7

0.5

8

30

0.5

0.25

Note: General operating conditionφep≦2 W, tw≦100 ns, Repetition frequency≦100 kHz

Max.

-

-

-

-

-

10

33

-

-

Unit

W

nm

nm

V

ns

degree

degree

A

mA

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.○C 1998 Hamamatsu Photonics K.K.

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