RF3117 Ver la hoja de datos (PDF) - RF Micro Devices
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RF3117 Datasheet PDF : 6 Pages
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Preliminary
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RF3117
3V 900MHZ LINEAR AMPLIFIER MODULE
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• Compatible with Qualcomm Chipset
• 3V CDMA2000/1X Cellular Handsets
• Spread-Spectrum Systems
2
Product Description
The RF3117 is a high-power, high-efficiency linear ampli-
fier module targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS handheld digital cellular equipment,
spread-spectrum systems, and other applications in the
824MHz to 849MHz band. The RF3117 has a digital con-
trol line for low power application to reduce the current
drain. The device is self-contained with 50Ω input and
output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
0.800 sq
typ
1.700
3.000
0.100
4.390
6.0 sq
2.500
NOTE: Nominal thickness, 1.55 mm.
0.600
0.100
Dimensions in mm.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VCC1 1
7 GND
RF IN 2
6 RF OUT
VREG 3
4
5 VCC2
Package Style: LGM (6mmx6mm)
Features
• Input/Output Internally Matched@50Ω
• Single 3V Supply
• 30dBm Linear Output Power
• 30dB Linear Gain
• 33% Linear Efficiency
• 55mA Idle Current
Ordering Information
RF3117
3V 900MHz Linear Amplifier Module
RF3117 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A0 011016
2-269
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