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EDS1232AATA-75MI Ver la hoja de datos (PDF) - Elpida Memory, Inc

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EDS1232AATA-75MI
Elpida
Elpida Memory, Inc Elpida
EDS1232AATA-75MI Datasheet PDF : 53 Pages
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EDS1232AATA-MI
Self refresh entry command (/CS, /RAS, /CAS, CKE = Low, /WE = High)
After the command execution, self refresh operation continues while CKE remains low. When CKE goes high, the
Synchronous DRAM exits the self refresh mode. During self refresh mode, refresh interval and refresh operation are
performed internally, so there is no need for external control. Before executing self refresh, all banks must be
precharged.
CLK
CKE
/CS
/RAS
/CAS
/WE
E BA0, BA1
(Bank select)
A10
Add
O Self Refresh Entry Command
Burst stop command (/CS = /WE = Low, /RAS, /CAS = High)
This command can stop the current burst operation.
L CLK
CKE H
/CS
/RAS
/CAS
P/WE
BA0, BA1
(Bank select)
A10
rAdd
Burst Stop Command in Full Page Mode
o No operation (/CS = Low, /RAS, /CAS, /WE = High)
This command is not an execution command. No operations begin or terminate by this command.
CLK
d CKE H
/CS
/RAS
u /CAS
/WE
BA0, BA1
(Bank select)
c A10
Add
t No Operation
Data Sheet E0340E30 (Ver. 3.0)
14

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