EL814 Ver la hoja de datos (PDF) - EVERLIGHT
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EL814 Datasheet PDF : 13 Pages
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4 PIN DIP PHOTOTRANSISTOR
AC INPUT PHOTOCOUPLER
EL814 Series
Electrical Characteristics (Ta=25°C unless specified otherwise)
Input
Parameter
Forward voltage
Input capacitance
Symbol
VF
Cin
Min.
-
-
Typ.*
1.2
50
Max.
1.4
250
Unit
Condition
V IF = ± 20mA
pF V = 0, f = 1KHz
Output
Parameter
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
Symbol
ICEO
Min.
-
BVCEO
80
BVECO
6
Typ.*
-
-
-
Max.
100
-
-
Unit
Condition
nA VCE = 20V, IF = 0mA
V
IC = 0.1mA
V IE = 0.1mA
Transfer Characteristics (Ta=25°C unless specified otherwise)
Parameter
Symbol Min.
Typ.*
Max.
Unit
Condition
Current Transfer EL814
20
-
300
CTR
% IF = ±1mA ,VCE = 5V
ratio
EL814A
50
-
150
Collector-emitter saturation
voltage
VCE(sat)
-
0.05
0.2
Isolation resistance
RIO
5×1010
1011
-
V
IF = ±20mA ,Ic = 1mA
Ω VIO = 500Vdc, 40~60%R.H
Cut-off frequency
Floating capacitance
Rise time
Fall time
VCE=5V, IC=2 mA,
fc
-
80
-
kHz
RL=100Ω, -3dB
CIO
-
0.6
1.0
pF VIO = 0, f = 1MHz
Tr
-
7
18
µs
Tf
-
11
18
VCE=2V, IC=2mA,RL=100Ω
µs
* Typical values at Ta = 25°C
Everlight Electronics Co., Ltd.
3
Document No：PDS-ELSAT-814 Rev.2.0
http://www.everlight.com
April , 18 2008
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