EN25B20 Ver la hoja de datos (PDF) - Eon Silicon Solution Inc.
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EN25B20 Datasheet PDF : 32 Pages
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EN25B20
EN25B20
2 Mbit Serial Flash Memory with Boot and Parameter Sectors
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 2 M-bit Serial Flash
- 2 M-bit/256 K-byte/1024 pages
- 256 bytes per programmable page
• High performance
- 75MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
• Flexible Sector Architecture:
- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one
32-Kbyte, and three 64-Kbyte sectors
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Byte program time: 7µs typical
- Page program time: 1.5ms typical
- Sector erase time: 300 to 800ms typical
- Chip erase time: 3 Seconds typical
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 150mil body width
- 8 contact VDFN
- All Pb-free packages are RoHS compliant
• Commercial and industrial temperature Range
GENERAL DESCRIPTION
The EN25B20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25B20 has eight sectors including three sectors of 64KB, one sector of 32KB, one sector of
16KB, one sector of 8KB and two sectors of 4KB. This device is designed to allow either single
Sector at a time or full chip erase operation. The EN25B20 can protect boot code stored in the small
sectors for either bottom or top boot configurations. The device can sustain a minimum of 100K
program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
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