AEC-Q101(2017) Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza

componentes Descripción

fabricante

AEC-Q101
(Rev.:2017)

30V PNP MEDIUM POWER TRANSISTOR IN SOT223

Diodes Incorporated. 

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Symbol

VCBO

VCEO

VEBO

IC

ICM

Value

-50

-30

-7

-5.5

-20

FZT949

Unit

V

V

V

A

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Power Dissipation

Linear Derating Factor

(Note 6)

PD

(Note 7)

Thermal Resistance, Junction to Ambient

Thermal Resistance Junction to Lead

(Note 6)

(Note 7)

(Note 8)

RθJA

RθJA

RθJL

Operating and Storage Temperature Range

TJ, TSTG

Value

3.0

24

1.6

12.8

42

78

8.8

-55 to +150

Unit

W

mW/°C

°C/W

°C

ESD Ratings (Note 9)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Symbol

ESD HBM

ESD MM

Value

4,000

400

Unit JEDEC Class

V

3A

V

C

Notes:

6. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single sided 1.6mm FR4 PCB; device is measured under

still air conditions whilst operating in a steady-state.

7. Same as Note 6, except mounted on 25mm x 25mm 1oz copper.

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

FZT949

Datasheet Number: DS38008 Rev. 2 - 2

2 of 7

www.diodes.com

April 2017

© Diodes Incorporated

Share Link: