RMWB04001 Ver la hoja de datos (PDF) - Raytheon Company
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RMWB04001 Datasheet PDF : 5 Pages
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RMWB04001
4 GHz Buffer Amplifier MMIC
Figure 2
Recommended
Application
Schematic
Circuit Diagram
Drain Supply
Vd=4 V
Bond
Wires
100 pF
MMIC Chip
10,000 pF
ADVANCED INFORMATION
Output Power
Detector Voltage Vdet
3 kΩ
100 pF
100 pF
Bond
Wires
RF IN
RF OUT
Bond
Wires
100 pF
Ground
(Back of Chip)
10,000 pF
Figure 3
Recommended
Assembly Diagram
Gate Supply Vg
Note:Detector delivers > 0.1V DC into 3kΩ load resistor for >20dBm output power. If output power level detection is not desired, do not connect
to detector bond pad.
Die-Attach
80Au/20Sn
Drain Supply
10,000pF Vd= 4
100pF
3kΩ
100pF
Output Power
Detector Voltage Vdet
100pF
5mil Thick
Alumina
50-Ohm
RF
Input
5 mil Thick
Alumina
50-Ohm
RF
Output
www.raytheon.com/micro
2 mil Gap
100pF
10,000pF
Gate Supply Vg
L< 0.015”
(2 Places)
Note: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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