FCH041N60F Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FCH041N60F Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS = 15.0V
10.0V
100
8.0V
7.0V
6.5V
6.0V
5.5V
10
5.0V
1
*Notes:
1. 250μs Pulse Test
0.1
0.05 0.1
2. TC = 25oC
1
10 20
VVDDSS,, DDrain to SoouurrcceeVVooltltaaggee[V[]V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.060
0.055
0.050
0.045
0.040
0.035
0.030
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
50
100
150
200
250
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
105
Ciss
104
Ciss = Cgs + Cgd (Cds = shorted)
103
Coss
Coss = Cds + Cgd
Crss = Cgd
102
101
100
0
Crss
*Note:
1. VGS = 0V
2. f = 1MHz
100 200 300 400 500 600
VVDDS, Drraiinn-StoouSrocuerVcoeltVaogleta[gVe] [V]
Figure 2. Transfer Characteristics
250
*Notes:
100 1. VDS = 20V
2. 250μs Pulse Test
10
25oC
150oC
-55oC
1
0.1
2
4
6
8
VGVSG, SG, aGtaeteto-SSoouurcrceeVVooltlataggee[V[]V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
250
100
150oC
25oC
10
1
0.1
0.1
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.8
1.2
1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 38A
0
0
50 100 150 200 250 300
Qg, Total Gate Charge [nC]
©2013 Fairchild Semiconductor Corporation
3
FCH041N60F Rev. C4
www.fairchildsemi.com
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