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FM200TU-3A

HIGH POWER SWITCHING USE INSULATED PACKAGE

Mitsumi 

MITSUBISHI <MOSFET MODULE>

FM200TU-3A

HIGH POWER SWITCHING USE

INSULATED PACKAGE

ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.)

Symbol

VDSS

VGSS

ID

IDM

IDA

IS*1

ISM*1

PD*4

PD*4

Tch

Tstg

Viso

Item

Drain-source voltage

Gate-source voltage

Drain current

Avalanche current

Source current

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

—

Mounting torque

—

Weight

G-S Short

D-S Short

TC’ = 122°C*3

Pulse*2

L = 10µH Pulse*2

Conditions

Pulse*2

TC = 25°C

TC’ = 25°C*3

Main terminal to base plate, AC 1 min.

Main Terminal M6

Mounting M6

Typical value

Ratings

150

±20

100

200

100

100

200

410

560

–40 ~ +150

–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5

600

Unit

V

V

A

A

A

A

A

W

W

°C

°C

V

N•m

N•m

g

ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)

Symbol

Item

Conditions

IDSS

VGS(th)

IGSS

rDS(ON)

(chip)

VDS(ON)

(chip)

R(lead)

Ciss

Coss

Crss

QG

td(on)

tr

td(off)

tf

trr*1

Qrr*1

VSD*1

Rth(ch-c)

Rth(ch-c’)

Rth(c-f)

Rth(c’-f’)

Drain cutoff current

Gate-source threshold voltage

Gate leakage current

Static drain-source

On-state resistance

Static drain-source

On-state voltage

Lead resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Reverse recovery time

Reverse recovery charge

Source-drain voltage

Thermal resistance

Contact thermal resistance

VDS = VDSS, VGS = 0V

ID = 10mA, VDS = 10V

VGS = VGSS, VDS = 0V

ID = 100A

VGS = 15V

ID = 100A

VGS = 15V

ID = 100A

terminal-chip

VDS = 10V

VGS = 0V

VDD = 80V, ID = 100A, VGS = 15V

Tch = 25°C

Tch = 125°C

Tch = 25°C

Tch = 125°C

Tch = 25°C

Tch = 125°C

VDD = 80V, ID = 100A, VGS1 = VGS2 = 15V

RG = 13Ω, Inductive load switching operation

IS = 100A

IS = 100A, VGS = 0V

MOSFET part (1/6 module)*7

MOSFET part (1/6 module)*3

Case to fin, Thermal grease Applied*8 (1/6 module)

Case to fin, Thermal grease Applied*3, *8 (1/6 module)

Limits

Min.

Typ.

Max. Unit

—

—

1

mA

4.7

6

7.3

V

—

—

1.5

µA

—

4.8

6.6

—

9.1

—

mΩ

—

0.48

0.66

V

—

0.91

—

—

1.2

—

—

1.68

—

mΩ

—

—

50

—

—

7

nF

—

—

4

—

820

—

nC

—

—

400

—

—

250

ns

—

—

450

—

—

200

—

—

200

ns

—

6.5

—

µC

—

—

1.3

V

—

—

0.30

—

—

0.22

—

0.1

—

°C/W

—

0.09

—

THERMISTOR PART

Symbol

Parameter

Conditions

Limits

Unit

Min.

Typ.

Max.

RTH*6

B*6

Resistance

B Constant

TTH = 25°C*5

Resistance at TTH = 25°C, 50°C*5

—

100

—

kΩ

—

4000

—

K

*1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).

*2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating.

*3: TC’ measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.

*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.

*5: TTH is thermistor temperature.

*6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)

*7: TC measured point is shown in page OUTLINE DRAWING.

*8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”.

May 2006

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