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MD56V62400

4-Bank x 4,194,304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM

Oki Electric Industry 

E2G1050-17-X1

¡ ¡ SemicondSucetormiconductor

This versiMonD:5M6Va6r.21490908P/rHeliminary

MD56V62400/H

4-Bank ¥ 4,194,304-Word ¥ 4-Bit SYNCHRONOUS DYNAMIC RAM

DESCRIPTION

The MD56V62400/H is a 4-bank ¥ 4,194,304-word ¥ 4-bit synchronous dynamic RAM, fabricated

in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

outputs are LVTTL compatible.

FEATURES

• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell

• 4-bank ¥ 4,194,304-word ¥ 4-bit configuration

• 3.3 V power supply, ±0.3 V tolerance

• Input : LVTTL compatible

• Output : LVTTL compatible

• Refresh : 4096 cycles/64 ms

• Programmable data transfer mode

– CAS latency (2, 3)

– Burst length (2, 4, 8)

– Data scramble (sequential, interleave)

• CBR auto-refresh, Self-refresh capability

• Package:

54-pin 400 mil plastic TSOP (Type II) (TSOPII54-P-400-0.80-K) (Product : MD56V62400/H-xxTA)

xx indicates speed rank.

PRODUCT FAMILY

Family

MD56V62400-10

MD56V62400-12

MD56V62400H-15

Max.

Frequency

100 MHz

83 MHz

66 MHz

Access Time (Max.)

tAC2

tAC3

9 ns

9 ns

14 ns

10 ns

9 ns

9 ns

1/28

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