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FM24CL16 Ver la hoja de datos (PDF) - Unspecified

Número de pieza
componentes Descripción
Lista de partido
FM24CL16
ETC
Unspecified ETC
FM24CL16 Datasheet PDF : 13 Pages
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FM24CL16
command to be issued with the slave address set to 1.
The operation is now a current address read. This
operation is illustrated in Figure 9.
By Master
Start
Address
No
Acknowledge
Stop
S
Slave Address 1 A
Data Byte
1P
By FM24CL16
Acknowledge Data
Figure 7. Current Address Read
By Master
Start
Address
Acknowledge
No
Acknowledge
S
Slave Address 1 A
Data Byte
A
Data Byte
1P
By FM24CL16
Acknowledge
Data
Figure 8. Sequential Read
Stop
By Master Start
Address
Start
Address
S
Slave Address 0 A
Word Address
AS
Slave Address 1 A
By FM24CL16
Acknowledge
Acknowledge
No
Acknowledge
Stop
Data Byte
A
Data Byte
1P
Data
Figure 9. Selective (Random) Read
Endurance
A typical EEPROM has a write endurance
specification that is fixed. Surpassing the specified
level of cycles on an EEPROM usually leads to a
hard memory failure. The 24CL16 has no such
limitation.
Applications
The versatility of FRAM technology fits into many
diverse applications. Clearly the strength of higher
write endurance and faster writes make FRAM
superior to EEPROM in all but one-time
programmable applications. The advantage is most
obvious in data collection environments where writes
are frequent and data must be nonvolatile.
The attributes of fast writes and high write endurance
combine in many innovative ways. A short list of
ideas is provided here.
1. Data collection. In applications where data is
collected and saved, FRAM provides a superior
alternative to other solutions. It is more cost effective
than battery backup for SRAM and provides better
write attributes than EEPROM.
2. Configuration. Any nonvolatile memory can
retain a configuration. However, if the configuration
changes and power failure is a possibility, the higher
write endurance of FRAM allows changes to be
recorded without restriction. Any time the system
state is altered, the change can be written. This avoids
writing to memory on power down when the available
time is short and power scarce.
Rev 2.2
July 2003
Page 7 of 13

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