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FM25V05

512Kb Serial 3V F-RAM Memory

Ramtron International Corporation 

FM25V05 - 512Kb SPI FRAM

Electrical Specifications

Absolute Maximum Ratings

Symbol

Description

VDD

Power Supply Voltage with respect to VSS

VIN

Voltage on any pin with respect to VSS

TSTG

TLEAD

VESD

Storage Temperature

Lead Temperature (Soldering, 10 seconds)

Electrostatic Discharge Voltage

- Human Body Model (AEC-Q100-002 Rev. E)

- Charged Device Model (AEC-Q100-011 Rev. B)

- Machine Model (AEC-Q100-003 Rev. E)

Package Moisture Sensitivity Level

Ratings

-1.0V to +4.5V

-1.0V to +4.5V

and VIN < VDD+1.0V

-55°C to + 125°C

260° C

4kV

1.25kV

200V

MSL-1

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating

only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this

specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.

DC Operating Conditions (TA = -40°C to + 85°C, VDD = 2.0V to 3.6V unless otherwise specified)

Symbol Parameter

Min

Typ

Max

Units Notes

VDD

Power Supply Voltage

IDD

Power Supply Operating Current

@ C = 1 MHz

2.0

3.3

3.6

V

1

-

0.3

mA

@ C = 40 MHz

1.5

3.0

mA

ISB

Standby Current

90

150

µA

2

IZZ

Sleep Mode Current

5

8

µA

3

ILI

Input Leakage Current

-

±1

µA

4

ILO

Output Leakage Current

-

±1

µA

4

VIH

Input High Voltage

0.7 VDD

VDD + 0.3

V

VIL

Input Low Voltage

-0.3

0.3 VDD

V

VOH1

Output High Voltage (IOH = -1 mA, VDD=2.7V)

2.4

-

V

VOH2

Output High Voltage (IOH = -100 µA)

VDD-0.2

-

V

VOL1

Output Low Voltage (IOL = 2 mA, VDD=2.7V)

-

0.4

V

VOL2

Output Low Voltage (IOL = 150 µA)

-

0.2

V

RIN

Input Resistance (/HOLD pin)

5

For VIN = VIH (min)

40

KΩ

For VIN = VIL (max)

1

MΩ

Notes

1. C toggling between VDD-0.2V and VSS, other inputs VSS or VDD-0.2V.

2. /S=VDD. All inputs VSS or VDD.

3. In Sleep mode and /S=VDD. All inputs VSS or VDD.

4. VSS ≤ VIN ≤ VDD and VSS ≤ VOUT ≤ VDD.

5. The input pull-up circuit is stronger (> 40KΩ) when the input voltage is above VIH and weak (> 1MΩ) when the input

voltage is below VIL.

Data Retention (TA = -40°C to + 85°C)

Parameter

Data Retention

Min

Max

Units

Notes

10

-

Years

Rev. 2.0

May 2010

Page 12 of 16

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