FM25V10 Ver la hoja de datos (PDF) - Cypress Semiconductor

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componentes Descripción

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FM25V10

3V F-RAM Memory

Cypress Semiconductor 

S

tCSU

1/tCK

tF

tR

C

tSU

tH

D

tODV

tOH

Q

FM25V10 - 1Mb SPI FRAM

tD

tCL

tCH

tCSH

tOD

/HOLD Timing

S

C

tHS

HOLD

Q

Power Cycle Timing

VDD

S

VDD min.

tVR

tPU

tHS

tHH

tHH

tHZ

tLZ

tVF

tPD

Power Cycle & Sleep Timing (TA = -40 C to + 85 C, VDD = 2.0V to 3.6V, unless otherwise specified)

Symbol Parameter

Min Max Units Notes

tVR

VDD Rise Time

tVF

VDD Fall Time

tPU

Power Up (VDD min) to First Access (/S low)

tPD

Last Access (/S high) to Power Down (VDD min)

tREC

Recovery Time from Sleep Mode

50

-

s/V

1,2

100

-

s/V

1,2

250

-

s

0

-

s

-

400

s

Notes

1. This parameter is characterized and not 100% tested.

2. Slope measured at any point on VDD waveform.

Document Number: 001-84499 Rev. **

Page 14 of 17

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