FSL126MRT Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FSL126MRT Datasheet PDF : 13 Pages
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VSTR
VDS
VCC
VFB
IDM
IDS
EAS
PD
TJ
VSTR Pin Voltage
Drain Pin Voltage
VCC Pin Voltage
Feedback Pin Voltage
Drain Current Pulsed(6)
Continuous Switching Drain Current
Single Pulsed Avalanche Energy(7)
Total Power Dissipation (TC=25°C)(8)
Maximum Junction Temperature
Operating Junction Temperature(9)
650
V
650
V
26
V
-0.3
10.0
V
8
A
2
A
73
mJ
50
W
150
°C
-40
+125
°C
TSTG Storage Temperature
-55
+150
°C
Notes:
6. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (DMAX=0.74)
and junction temperature (see Figure 4).
7. L=45mH, starting TJ=25°C.
8. Infinite cooling condition (refer to the SEMI G30-88).
9. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.
Figure 4. Repetitive Peak Switching Current
ESD Capability
Symbol
ESD
Parameter
Human Body Model, JESD22-A114
Charged Device Model, JESD22-C101
Value
5
2
Unit
KV
Thermal Impedance
TA=25°C unless otherwise specified.
Symbol
Parameter
Value
θJA
Junction-to-Ambient Thermal Impedance(10)
θJC
Junction-to-Case Thermal Impedance(11)
63.5
2.9
Notes:
10. Free standing without heat sink under natural convection condition, per JEDEC 51-2 and 1-10.
11. Infinite cooling condition per Mil Std. 883C method 1012.1.
Unit
°C/W
°C/W
© 2012 Fairchild Semiconductor Corporation
FSL126MRT • Rev. 1.0.0
4
www.fairchildsemi.com
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