G9015 Ver la hoja de datos (PDF) - GTM CORPORATION

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G9015

PNP EPITAXIAL TRANSISTOR

GTM CORPORATION 

G9015

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The G9015 is designed for use in pre-amplifier of low level and low noise.

Package Dimensions

D

E

S1

TO-92

ISSUED DATE :2004/11/18

REVISED DATE :

b1

S E A T IN G

PLANE

C

e1

b

e

Absolute Maximum Ratings at Ta = 25

Parameter

Symbol

Junction Temperature

Tj

Storage Temperature

Tstg

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

Collector Current

IC

Total Power Dissipation

PD

Characteristics at

Symbol

BVCBO

Min.

-50

BVCEO

-45

BVEBO

-5

ICBO

-

IEBO

-

*VCE(sat)

-

*VBE(sat)

-

VBE(on)

-0.6

*hFE

100

fT

100

Cob

-

Ta = 25

Typ.

-

-

-

-

-

-0.20

-0.82

-0.65

200

190

4.5

Max.

-

-

-

-50

-50

-0.7

-1.0

-0.75

600

-

7

Classification Of hFE

Rank

hFE

B

100 - 300

C

200 - 600

REF.

A

S1

b

b1

C

Millimeter

Min. Max.

4.45

4.7

1.02

-

0.36

0.51

0.36

0.76

0.36

0.51

REF.

D

E

L

e1

e

Millimeter

Min.

Max.

4.44

4.7

3.30

3.81

12.70

-

1.150 1.390

2.42

2.66

Ratings

Unit

+150

-55 ~ +150

-50

V

-45

V

-5

V

-100

mA

450

mW

Unit

V

V

V

nA

nA

V

V

V

MHz

pF

Test Conditions

IC=-100uA , IE=0

IC=-1mA, IB=0

IE=-100uA, IC=0

VCB=-50V, IE=0

VEB=-5V, IC=0

IC=-100mA, IB=-5mA

IC=-100mA, IB=-5mA

VCE=-5V, IC=-2mA

VCE=-5V, IC=-1mA

VCE=-5V, IC=-10mA

VCB=-10V, f=1MHz

*Pulse Test: Pulse Width 380us, Duty Cycle 2%

1/3

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