GA200SA60S Ver la hoja de datos (PDF) - International Rectifier
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GA200SA60S Datasheet PDF : 9 Pages
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GA200SA60SP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 — —
Emitter-to-Collector Breakdown Voltage f 18 — —
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.62 —
— 1.10 1.3
V
V
V/°C
VGE = 0V, IC = 250μA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 100A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage
gfe
Forward Transconductance g
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
— 1.33 —
V
IC = 200A
See Fig.2, 5
— 1.02 —
IC = 100A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250μA
— -10 — mV/°C VCE = VGE, IC = 2 mA
90 150 — S VCE = 100V, IC = 100A
— — 1.0 mA VGE = 0V, VCE = 600V
— — 10
VGE = 0V, VCE = 10V, TJ = 150°C
— — ±250 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
— 770 1200
IC = 100A
— 100 150
— 260 380
— 78 —
nC VCC = 400V
VGE = 15V
See Fig. 8
— 56 — ns TJ = 25°C
— 890 1300
IC = 100A, VCC = 480V
— 390 580
VGE = 15V, RG = 2.0Ω
— 0.98 —
Energy losses include "tail"
— 17.4 — mJ See Fig. 9, 10, 13
— 18.4 25.5
— 72 —
— 60 —
— 1500 —
TJ = 150°C,
ns IC = 100A, VCC = 480V
VGE = 15V, RG = 2.0Ω
— 660 —
Energy losses include "tail"
— 35.7 — mJ See Fig. 10,11, 13
— 5.0 — nH Between lead,
and center of the die contact
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
— 16250 —
— 1040 —
— 190 —
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
c Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 15 )
f Pulse width ≤ 80μs; duty factor ≤ 0.1%.
d VCC = 80%(VCES), VGE = 20V, L = 10μH, RG = 2.0Ω,
(See fig. 14)
g Pulse width 5.0μs, single shot.
e Repetitive rating; pulse width limited by maximum
junction temperature.
2
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