GA200TS60U Ver la hoja de datos (PDF) - International Rectifier

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GA200TS60U

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

International Rectifier 

GA200TS60U

+Vge

90% Vge

Vce

Ic 10% Vce

td (o ff)

90% Ic

Ic

5% Ic

tf

∫ t1+5µS

E off = VV cceeicIcdtdt

t1

Fig. 17a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

t1

t2

Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

10% +Vg

GATE VO LTAG E D.U.T.

+Vg

Vce

10% Ic

Vcc

90% Ic

td(on)

5% Vce

tr

t1

DUT VOLTAGE

AND CURRENT

Ipk

Ic

∫ t2

E on = VVcceeieIcdtdt

t1

t2

Fig. 17c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, td(on), tr

8

trr

Ic

tx

10% Vcc

Vpk

Irr

trr

∫ Q rr = iIdcddt t

tx

10% Irr

Vcc

DIODE RECOVERY

W AVEFORMS

DIO DE REVERSE

RECOVERY ENERGY

t3

∫ t4

E rec = VVddidIcdt dt

t3

t4

Fig. 17d - Test Waveforms for Circuit of Fig. 18a,

Defining Erec, trr, Qrr, Irr

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