GA100NA60U
Same type
device as
D .U .T .
80%
of Vce
430µF
D .U .T .
Fig. 17a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Vge
VC
90%
10%
90%
td(off)
IC 5%10%
t d(on)
tr
tf
Eon
Eoff
Ets = (Eon +Eoff )
t=5µs
Fig. 17b - Test Waveforms for Circuit of Fig. 17a, Defining
Eoff, td(off), tf
10% +Vg
G ATE VO LTA G E D .U .T.
+Vg
Vce
10% Ic
Vcc
90% Ic
td (o n )
5% Vce
tr
t1
DUT VOLTAGE
AND CURRENT
Ipk
Ic
∫ t2
E on = VVcceeieIcdtdt
t1
t2
trr
Ic
tx
10% Vcc
Vpk
Irr
DIO DE REVE RSE
RECOVERY ENERGY
t3
trr
∫ Q rr = iIdcddt t
tx
10% Irr
Vcc
DIODE RECOVERY
W AVEFORMS
∫ t4
E rec = VVdcidIcdtdt
t3
t4
Fig. 17c - Test Waveforms for Circuit of Fig. 17a,
Defining Eon, td(on), tr
8
Fig. 17d - Test Waveforms for Circuit of Fig. 17a,
Defining Erec, trr, Qrr, Irr
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