T2316162A-45 Ver la hoja de datos (PDF) - Taiwan Memory Technology
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T2316162A-45 Datasheet PDF : 13 Pages
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tm TE
CH
T2316162A
AC ELECTRICAL CHARACTERISTICS (continued)
AC CHARACTERISTICS
PARAMETER
Read Command Setup Time
Read Command Hold Time Reference to CAS
Read Command Hold Time Reference to RAS
CAS to Output in Low-Z
Output Buffer Turn-off Delay From CAS or
RAS
Output Buffer Turn-off to OE
Write Command Setup Time
Write Command Hold Time
Write Command Hold Time (Reference to
RAS )
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Setup Time
Data-in Hold Time
Data-in Hold Time (Reference to RAS )
RAS to WE Delay Time
Column Address to WE Delay Time
CAS to WE Delay Time
Transition Time (rise or fall)
Refresh Period (1024 cycles)
RAS to CAS Precharge Time
CAS Setup Time (CBR REFRESH)
CAS Hold Time (CBR REFRESH)
OE Hold Time From WE During Read-
Modify-Write Cycle
OE Low to CAS High Setup Time
OE High Hold Time From CAS High
OE High Pulse Width
OE Setup Prior to CAS During Hidden
Refresh Cycle
Last CAS Going Low to First CAS
Returning High
Data Output Hold After CAS Returning Low
Output Disable Delay From WE
SYM
tRCS
tRCH
tRRH
tCLZ
tOFF1
tOFF2
tWCS
tWCH
tWCR
tWP
tRWL
tCWL
tDS
tDH
tDHR
tRWD
tAWD
tCWD
tT
tREF
tRPC
tCSR
tCHR
tOEH
tOES
tOEHC
tOEP
tORD
tCLCH
tCOH
tWHZ
-45
-50
-60 UNIT Notes
MIN MAX MIN MAX MIN MAX
0
0
0
ns 15,18
0
0
0
ns 9,15,19
0
0
0
ns 9
3
3
3
ns 20
3 15 3 15 3 15 ns 10,17,
20
8
8
15 ns 17,28
0
0
0
ns 11,15,1
8
6
8
10
ns 15,27
35
38
45
ns 15
6
8
15
ns 15
9
9
10
ns 15
8
8
10
ns 15,19
0
0
0
ns 12,20
6
8
10
ns 12,20
35
38
45
ns
61
64
85
ns 11
35
39
55
ns 11
27
27
40
ns 11,18
2.5 50 2.5 50 2.5 50 ns 2,3
16
16
16 ms
10
10
10
ns
10
10
10
ns 1,18
10
10
10
ns 1,19
6
10
15
ns 16
5
5
5
ns
3
5
10
ns
2
5
10
ns
0
0
0
ns
6
10
10
ns 21
4
5
5
ns
3 7 3 10 3 15 ns
TM Technology Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date:APR. 2002
Revision:E
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