T2316160A Ver la hoja de datos (PDF) - Taiwan Memory Technology
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T2316160A Datasheet PDF : 13 Pages
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T2316160A
AC CHARACTERISTICS (continued)
AC CHARACTERISTICS
PARAMETER
Column Address Hold Time
Column Address Hold Time (Reference to RAS )
Column Address to RAS Lead Time
Read Command Setup Time
Read Command Hold Time Reference to CAS
Read Command Hold Time Reference to RAS
CAS to Output in Low-Z
Output Buffer Turn-off Delay From CAS or RAS
Output Buffer Turn-off OE to
Write Command Setup Time
Write Command Hold Time
Write Command Hold Time (Reference to RAS )
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Setup Time
Data-in Hold Time
Data-in Hold Time (Reference to RAS )
RAS to WE Delay Time
Column Address to WE Delay Time
CAS to WE Delay Time
Transition Time (rise or fall)
Refresh Period (1024 cycles)
RAS to CAS Precharge Time
CAS Setup Time (CBR REFRESH)
CAS Hold Time (CBR REFRESH)
OE Hold Time From WE During Read-Modify-Write Cycle
OE Setup Prior to RAS During Hidden Refresh Cycle
SYM
tCAH
tAR
tRAL
tRCS
tRCH
tRRH
tCLZ
tOFF1
tOFF2
tWCS
tWCH
tWCR
tWP
tRWL
tCWL
tDS
tDH
tDHR
tRWD
tAWD
tCWD
tT
tREF
tRPC
tCSR
tCHR
tOEH
tORD
-45
MIN MAX
6
35
-60
MIN MAX UNIT
10
ns
45
ns
Notes
19
30
ns
0
0
ns 14
0
0
ns 9,14
0
0
ns 9
3
3
ns
3 15 3 15 ns 10,16
8
15 ns 16
0
0
ns 11,14
6
10
ns
35
45
ns 14
7
15
ns 14
9
10
ns 14
8
10
ns 14
0
0
ns 12
6
10
ns 12
35
45
ns
61
85
ns 11
35
55
ns 11
27
40
ns 11
2.5 50 2.5 50 ns 2,3
16
16 ms
10
10
ns
10
10
ns 6
10
10
ns 6
6
15
ns 15
0
0
ns
Taiwan Memory Technology, Inc. reserves the right P. 5
to change products or specifications without notice.
Publication Date: APR. 2002
Revision:A
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