GP1L50J0000F Ver la hoja de datos (PDF) - Sharp Electronics
Número de pieza
componentes Descripción
fabricante
GP1L50J0000F
Sharp Electronics
GP1L50J0000F Datasheet PDF : 12 Pages
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GP1L50J0000F
■ Design Considerations
● Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 4mm or more from the top of elements.
(Example)
4mm or more
3) Screw tightening torque
The tightening toque for screwing should be 0.6N⋅m or less.
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category
Material
Phototransistor
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
800
Sensitivity
wavelength (nm)
400 to 1 200
Response time (μs)
80
• Photo emitter (qty. : 1)
Category
Infrared emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
Maximum light emitting
wavelength (nm)
950
• Material
Case
Black NORYL resin
Lead frame plating
Solder dip. (Sn−3Ag−0.5Cu)
I/O Frequency (MHz)
0.3
Sheet No.: D3-A03001EN
8
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