GS881E18BD(2002) Ver la hoja de datos (PDF) - Giga Semiconductor

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GS881E18BD
(Rev.:2002)

512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs

Giga Semiconductor 

GS881E18B(T/D)/GS881E32B(D)/GS881E36B(T/D)

Byte Write Truth Table

Function

GW

BW

BA

BB

BC

BD

Notes

Read

H

H

X

X

X

X

1

Read

H

L

H

H

H

H

1

Write byte a

H

L

L

H

H

H

2, 3

Write byte b

H

L

H

L

H

H

2, 3

Write byte c

H

L

H

H

L

H

2, 3, 4

Write byte d

H

L

H

H

H

L

2, 3, 4

Write all bytes

H

L

L

L

L

L

2, 3, 4

Write all bytes

L

X

X

X

X

X

Notes:

1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.

2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.

3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.

4. Bytes “C” and “D” are only available on the x36 version.

Rev: 1.00b 12/2002

11/34

© 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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