GT8G131 Ver la hoja de datos (PDF) - Toshiba

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GT8G131

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Collector cut-off current

Gate-emitter cut-off voltage

Collector-emitter saturation voltage

Input capacitance

IGES

ICES

VGE (OFF)

VCE (sat)

Cies

VGE = ±6 V, VCE = 0

VCE = 400 V, VGE = 0

IC = 1 mA, VCE = 5 V

IC = 150 A, VGE = 4 V

VCE = 10 V, VGE = 0, f = 1 MHz

Rise time

Switching time

Turn-on time

Fall time

Turn-off time

tr

4V

0

ton

51 Ω

tf

VIN:

Duty

ttcrfy<=<=cl11e00<=00

ns

ns

1%

300 V

toff

Thermal resistance

(Note 2) Rth (j-a)

⎯

Note 2: Drive operation: Mount on glass epoxy board [1 inch2 × 1.5 t]

GT8G131

Min Typ. Max Unit

⎯

⎯

±10

μA

⎯

⎯

10

μA

0.6

⎯

1.5

V

⎯

3.0

7.0

V

⎯ 3800 ⎯

pF

⎯ 1.5 ⎯

⎯ 1.7 ⎯

μs

⎯

1.9

⎯

⎯

2.4

⎯

⎯

⎯

114 °C/W

Marking

GT8G131

※

Type

Lot No.

● on lower left of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture (01 for first week of year, continues up to 52 or 53)

Year of manufacture (One low-order digits of calendar year)

2

2006-11-02

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