H12N65 Ver la hoja de datos (PDF) - Hi-Sincerity Mocroelectronics
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H12N65 Datasheet PDF : 6 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200902
Issued Date : 2009.03.24
Revised Date :2009.08.05
Page No. : 1/6
H12N65 Series
N-Channel Power MOSFET (650V,12A)
Applications
• Switch Mode Power Supply
• Uninterruptable Power Supply
• High Speed Power Switching
Features
• H12N65 Series is a High voltage NChannel enhancement mode power MOSFET
chip fabricated in advanced silicon epitaxial planar technology
• Advanced termination scheme to provide enhanced voltageblocking capability
• Avalanche Energy Specified
• Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
• The packaged product is widely used in AC-DC power suppliers, DCDC converters and
Hbridge PWM motor drivers
Absolute Maximum Ratings
H12N65 Series
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
123
3-Lead TO-220FP)
Plastic Package
Package Code: F
Pin 1: Gate
Pin 2: Drain
3 Pin 3: Source
2
1
H12N65F Series Symbol
D
G
S
Symbol
VDSS
ID
VGS
PD
Parameter
Drain-Source Voltage
Drain Current (VGS@10V, TC=25oC)
Gate-to-Source Voltage
Total Power Dissipation (TC=25oC)
Linear Derating Factor
EAS
Single Pulse Avalanche Energy*2
IAR
Avalanche Current*1
EAR
Repetitive Avalanche Energy*1
TJ
Operating Junction Temperature Range
Tstg
Storage Temperature Range
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting TJ=25°C, L=1.2mH, RG=25Ω, IAS=10A
*3: ISD≤14A, di/dt≤130A/us, VDD≤V(BR)DSS, TJ≤150°C
Value
650
12
±30
TO-220AB
175
TO-220FP
50
TO-220AB
1.43
TO-220FP
0.41
990
12
22
-55 to 150
-55 to 150
Units
V
A
V
W
W/°C
mJ
A
mJ
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case (Max.)
RθJA Thermal Resistance Junction to Ambient (Max.)
Value
TO-220AB
1.3
TO-220FP
5
62
Units
°C/W
°C/W
H10N65 Series
HSMC Product Specification
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