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HA17384SRP

High Speed Current Mode PWM Control IC for Switching Power Supply

Hitachi -> Renesas Electronics 

HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP

Absolute Maximum Ratings (cont)

Notes: 2. This is the value when the device is mou nted on a glass-epoxy substrate (40 mm × 40 mm × 1.6

mm). However,

For the HA17384HRP and HA17385HRP,

Derating should be performed with 8.3 mW/°C in the Ta ≥ 43°C range if the substrate wiring

density is 10%.

Derating should be performed with 11.1 mW/°C in the Ta ≥ 63°C range if the substrate wiring

density is 30%.

For the HA17384SRP,

Derating should be performed with 8.3 mW/°C in the Ta ≥ 68°C range if the substrate wiring

density is 10%.

Derating should be performed with 11.1 mW/°C in the Ta ≥ 89°C range if the substrate wiring

density is 10%.

800

680 mW

600

500 mW

400 374 mW

HA17384SRP

: −11.1 mW/°C (wiring density is 30%)

: −8.3 mW/°C (wiring density is 10%)

HA17384HRP, HA17385HRP

: −11.1 mW/°C (wiring density is 30%)

: −8.3 mW/°C (wiring density is 10%)

222 mW

200

166 mW

0

−20

0

43°C 63°C 68°C 89°C 105°C 125°C

20

40

60

80

100

120

140

Ambient Temperature Ta (°C)

3. Applies to the HA17384HPS/HRP and HA17385HPS/HRP.

4. Applies to the HA17384SPS/SRP.

150°C

160

6

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