HEF4077BN Ver la hoja de datos (PDF) - Philips Electronics
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HEF4077BN Datasheet PDF : 3 Pages
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Philips Semiconductors
Quadruple exclusive-NOR gate
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
SYMBOL TYP. MAX.
Propagation delays
An, Bn → On
HIGH to LOW
LOW to HIGH
Output transition
times
HIGH to LOW
LOW to HIGH
5
10 tPHL
15
5
10 tPLH
15
5
10 tTHL
15
5
10 tTLH
15
75
150 ns
35
70 ns
30
55 ns
70
145 ns
30
60 ns
25
50 ns
60
120 ns
30
60 ns
20
40 ns
60
120 ns
30
60 ns
20
40 ns
Product specification
HEF4077B
gates
TYPICAL EXTRAPOLATION
FORMULA
48 ns + (0,55 ns/pF) CL
24 ns + (0,23 ns/pF) CL
22 ns + (0,16 ns/pF) CL
43 ns + (0,55 ns/pF) CL
19 ns + (0,23 ns/pF) CL
17 ns + (0,16 ns/pF) CL
10 ns + (1,0 ns/pF) CL
9 ns + (0,42 ns/pF) CL
6 ns + (0,28 ns/pF) CL
10 ns + (1,0 ns/pF) CL
9 ns + (0,42 ns/pF) CL
6 ns + (0,28 ns/pF) CL
Dynamic power
dissipation per
package (P)
VDD
V
TYPICAL FORMULA FOR P(µW)
5
850 fi + ∑ (foCL) × VDD2
where
10
4 500 fi + ∑ (foCL) × VDD2
fi = input freq. (MHz)
15
14 700 fi + ∑ (foCL) × VDD2
fo = output freq. (MHz)
CL = load capacitance (pF)
∑ (foCL) = sum of outputs
VDD = supply voltage (V)
January 1995
3
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