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HIN202, HIN206, HIN207, HIN208, HIN211, HIN213
Die Characteristics
DIE DIMENSIONS:
160 mils x 140 mils
METALLIZATION:
Type: Al
Thickness: 10kÅ ±1kÅ
SUBSTRATE POTENTIAL
V+
Metallization Mask Layout
PASSIVATION:
Type: Nitride over Silox
Nitride Thickness: 8kÅ
Silox Thickness: 7kÅ
TRANSISTOR COUNT:
238
PROCESS:
CMOS Metal Gate
HIN211
SHD
EN
R4IN
R4OUT T4IN T3IN R5OUT
R5IN
R3OUT
R3IN
T4OUT
T3OUT
T1OUT
T2OUT
R2IN
R2OUT T2IN T1IN R1OUT
R1IN GND
V-
C2-
C2+
C1-
V+
C1+
VCC
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