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HIP6019B(1998) Ver la hoja de datos (PDF) - Intersil

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HIP6019B Datasheet PDF : 15 Pages
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HIP6019B
lower MOSFET and the turn on of the upper MOSFET. The
diode must be a Schottky type to prevent the lossy parasitic
MOSFET body diode from conducting. It is acceptable to
omit the diode and let the body diode of the lower MOSFET
clamp the negative inductor swing, but efficiency might drop
one or two percent as a result. The diode's rated reverse
breakdown voltage must be greater than twice the maximum
input voltage.
PWM2 MOSFET and Schottky Selection
The power dissipation in PWM2 converter power devices is
similar to PWM1 except that the power losses of the lower
device are representative of a Schottky diode instead of a
MOSFET. The transistor power losses follow the PWM1
upper MOSFET equation, so the selection process should
be somewhat similar. The equation below describes the
conduction power losses incurred by the Schottky diode.
PSCH = I--O------×-----V----f---×-----(-V-V---I-I-N-N------–----V----O-----U----T---)-
As it can be observed, conduction losses in the Schottky
diode are proportional with the forward voltage drop (Vf).
Linear Controller MOSFET Selection
The main criteria for selection of MOSFET for the linear
regulator is package selection for efficient removal of heat.
The power dissipated in a linear regulator is:
PLINEAR = IO × (VIN VOUT)
Select a package and heatsink that maintains the junction
temperature below the maximum rating while operating at
the highest expected ambient temperature.
HIP6019B DC-DC Converter Application
Circuit
Figure 15 shows an application circuit of a power supply for
a microprocessor computer system. The power supply
provides the microprocessor core voltage (VOUT1), the I/O
voltage (VOUT2), the GTL bus voltage (VOUT3) and clock
generator voltage (VOUT4) from +5VDC and +12VDC. For
detailed information on the circuit, including a Bill-of-
Materials and circuit board description, see Application Note
AN9800. Also see Intersil’s web page
(http://www.intersil.com).
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