HM5117805LTS-7 Ver la hoja de datos (PDF) - Elpida Memory, Inc
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HM5117805LTS-7 Datasheet PDF : 32 Pages
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HM5117805 Series
Write Cycle
Parameter
Write command setup time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
Data-in hold time
HM5117805
-5
-6
Symbol Min Max Min
t WCS
0
—0
t WCH
7
— 10
t WP
7
— 10
t RWL
7
— 10
t CWL
7
— 10
t DS
0
—0
t DH
7
— 10
-7
Max Min
—0
— 13
— 10
— 13
— 13
—0
— 13
Max Unit
— ns
— ns
— ns
— ns
— ns
— ns
— ns
Notes
14
15
15
Read-Modify-Write Cycle
Parameter
Read-modify-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE hold time from WE
HM5117805
-5
-6
Symbol Min Max Min
t RWC
111 — 135
t RWD
67 — 79
t CWD
30 — 34
t AWD
42 — 49
t OEH
13 — 15
-7
Max Min
— 161
— 92
— 40
— 57
— 18
Max Unit
— ns
— ns
— ns
— ns
— ns
Notes
14
14
14
Refresh Cycle
HM5117805
-5
-6
Parameter
Symbol Min Max Min
CAS setup time (CBR refresh cycle) tCSR
CAS hold time (CBR refresh cycle) tCHR
WE setup time (CBR refresh cycle) tWRP
WE hold time (CBR refresh cycle) tWRH
RAS precharge to CAS hold time tRPC
5
—5
7
— 10
0
—0
7
— 10
5
—5
-7
Max Min
—5
— 10
—0
— 10
—5
Max Unit
— ns
— ns
— ns
— ns
— ns
Notes
Data Sheet E0156H10
10
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