HM5117805TS-6 Ver la hoja de datos (PDF) - Elpida Memory, Inc

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HM5117805TS-6

16 M EDO DRAM (2-Mword × 8-bit) 2 k Refresh

Elpida Memory, Inc 

HM5117805 Series

EDO Page Mode Cycle

HM5117805

-5

-6

-7

Parameter

Symbol Min Max Min Max Min Max Unit

EDO page mode cycle time

t HPC

EDO page mode RAS pulse width tRASP

Access time from CAS precharge tCPA

RAS hold time from CAS precharge tCPRH

Output data hold time from CAS low tDOH

CAS hold time referred OE

t COL

CAS to OE setup time

t COP

Read command hold time from CAS tRCHC

precharge

20 —

25 —

30 —

ns

— 100000 — 100000 — 100000 ns

— 28

— 35

— 40

ns

28 —

35 —

40 —

ns

3—

3—

3—

ns

7—

10 —

13 —

ns

5—

5—

5—

ns

28 —

35 —

40 —

ns

Notes

19

16

9, 17

9, 17

EDO Page Mode Read-Modify-Write Cycle

HM5117805

-5

-6

Parameter

Symbol Min Max Min

EDO page mode read- modify-write tHPRWC 57 — 68

cycle time

WE delay time from CAS precharge tCPW

45 — 54

-7

Max Min

— 79

— 62

Max Unit

ns

ns

Notes

14

Refresh

Parameter

Refresh period

Refresh period (L-version)

Symbol

t REF

t REF

Max

32

128

Unit

ms

ms

Note

2048 cycles

2048 cycles

Data Sheet E0156H10

11

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