HM5116405TS-6 Ver la hoja de datos (PDF) - Elpida Memory, Inc
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HM5116405TS-6 Datasheet PDF : 34 Pages
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HM5116405 Series, HM5117405 Series
AC Characteristics (Ta = 0 to +70˚C, VCC = 5 V ±10%, VSS = 0 V) *1, *2, *18
Test Conditions
• Input rise and fall time: 2 ns
• Input levels: VIL = 0 V, VIH = 3 V
• Input timing reference levels: 0.8 V, 2.4 V
• Output timing reference levels: 0.8 V, 2.0 V
• Output load: 1 TTL gate + CL (100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
HM5116405/HM5117405
-5
-6
-7
Parameter
Symbol Min Max Min Max Min
Random read or write cycle time tRC
RAS precharge time
t RP
CAS precharge time
t CP
RAS pulse width
t RAS
CAS pulse width
t CAS
Row address setup time
t ASR
Row address hold time
t RAH
Column address setup time
t ASC
Column address hold time
t CAH
RAS to CAS delay time
t RCD
RAS to column address delay time tRAD
RAS hold time
t RSH
CAS hold time
t CSH
CAS to RAS precharge time
t CRP
OE to Din delay time
t OED
OE delay time from Din
t DZO
CAS delay time from Din
t DZC
Transition time (rise and fall)
tT
84 — 104 — 124
30 — 40 — 50
7 — 10 — 13
50 10000 60 10000 70
7 10000 10 10000 13
0—0—0
7 — 10 — 10
0—0—0
7 — 10 — 13
11 37 14 45 14
9 25 12 30 12
10 — 13 — 13
35 — 40 — 45
5—5—5
13 — 15 — 18
0—0—0
0—0—0
2 50 2 50 2
Max Unit
— ns
— ns
— ns
10000 ns
10000 ns
— ns
— ns
— ns
— ns
52 ns
35 ns
— ns
— ns
— ns
— ns
— ns
— ns
50 ns
Notes
3
4
5
6
6
7
Data Sheet E0151H10
11
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