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HM6216255H

4M high Speed SRAM (256-kword × 16-bit)

Hitachi -> Renesas Electronics 

HM6216255H Series

Recommended DC Operating Conditions (Ta = 0 to +70°C)

Parameter

Symbol

Min

Typ

Supply voltage

VCC*2

VSS * 3

4.5

5.0

0

0

Input voltage

VIH

2.2

—

VIL

–0.5*1

—

Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) ≤ 8 ns

2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 8 ns

3. The supply voltage with all VCC pins must be on the same level.

4. The supply voltage with all VSS pins must be on the same level.

Max

5.5

0

VCC + 0.5*2

0.8

Unit

V

V

V

V

DC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V ± 10 %, VSS = 0 V)

Parameter

Symbol Min

Typ*1 Max Unit Test conditions

Input leakage current

Output leakage

current*1

|ILI|

—

—

2

|ILO|

—

—

2

µA Vin = VSS to VCC

µA Vin = VSS to VCC

Operating power

supply current

10 ns cycle ICC

Standby power supply

current

12 ns cycle ICC

15 ns cycle ICC

10 ns cycle ISB

12 ns cycle ISB

15 ns cycle ISB

I SB1

—

—

200

mA CS = VIL, Iout = 0 mA

Other inputs = VIH/VIL

—

—

180

—

—

160

—

—

70

mA CS = VIH,

Other inputs = VIH/VIL

—

—

60

—

—

50

—

0.1

5

mA VCC ≥ CS ≥ VCC – 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

—*2

0.1*2

1.2 *2

Output voltage

VOL

—

—

0.4

V

VOH

2.4

—

—

V

Note: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.

2. This characteristics is guaranteed only for L-version.

IOL = 8 mA

IOH = –4 mA

5

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