HMC863 Ver la hoja de datos (PDF) - Hittite Microwave

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HMC863

GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz

Hittite Microwave 

Outline Drawing

v00.1109

HMC863

GaAs pHEMT MMIC ½ WATT

POWER AMPLIFIER, 24 - 29.5 GHz

3

Die Packaging Information [1]

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND PAD IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

8. OVERALL DIE SIZE ± .002

Pad Descriptions

Pad Number

Function

1

RFIN

2

Vgg

Description

This pad is AC coupled

and matched to 50 Ohms.

Gate control for PA. Adjust Vgg to achieve recommended

bias current. External bypass caps 100pF, 0.1 μF and

4.7 μF are required.

Interface Schematic

3

Vdd

4

RFOUT

Drain bias for amplifier. External bypass caps

100pF, 0.1 μF and 4.7uF are required

This pad is AC coupled

and matched to 50 Ohms.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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