5962R9666301TXC Ver la hoja de datos (PDF) - Intersil
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5962R9666301TXC Datasheet PDF : 3 Pages
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Die Characteristics
DIE DIMENSIONS:
2450µm x 4950µm x 533µm ±25.4µm
(97 x 195 x 21mils ±1mil)
METALLIZATION:
M1: Mo/Tiw
Thickness: 5800Å
M2: Al/Si/Cu
Thickness: 10kÅ ±1kÅ
SUBSTRATE POTENTIAL:
Internally connected to VDD.
May be left floating.
Metallization Mask Layout
HS-26C31RH-T
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: SiO2
Thickness: 8kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
TRANSISTOR COUNT:
285
PROCESS:
Radiation Hardened CMOS, AVLSI
HS-26C31RH
AO (2)
AO (3)
ENABLE (4)
BO (5)
BO (6)
(14) DO
(13) DO
(12) ENABLE
(11) CO
(10) CO
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