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76407DK8 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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76407DK8 Datasheet PDF : 12 Pages
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HUFA76407DK8
Typical Performance Curves (Continued)
500
RθJA = 228oC/W
100
SINGLE PULSE
TJ
TA
=
=
MAX
25oC
RATED
10
OPERATION IN THIS
AREA MAY BE
1 LIMITED BY rDS(ON)
100µs
1ms
10ms
0.1
1
10
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
15
TJ = -55oC
TJ = 25oC
TJ = 150oC
10
5
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
20
VGS = 10V
VGS = 5V
15
10
VGS = 4.5V
VGS = 4V
VGS = 3.5V
PULSE DURATION = 80µs
5
DUTY CYCLE = 0.5% MAX
TA = 25oC
VGS = 3V
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
150
ID = 3.8A
120
ID = 1A
90
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
VGS = 10V, ID = 3.8A
1.0
60
2
3
4
5
6
7
8
9 10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
©2001 Fairchild Semiconductor Corporation
0.5
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
HUFA76407DK8 Rev. B

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