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HUR60120PT

High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Sirectifier Electronics 

HUR60100PT, HUR60120PT

High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Symbol

Test Conditions

IR

VF

RthJC

RthCH

trr

IRM

TVJ=25oC; VR=VRRM

TVJ=150oC; VR=VRRM

IF=30A; TVJ=150oC

TVJ=25oC

IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC

VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100oC

Characteristic Values

Unit

typ.

max.

250

uA

1

mA

1.78

2.74

V

0.25

0.9

K/W

40

ns

5.5

11.4

A

FEATURES

* International standard package

* Planar passivated chips

* Very short recovery time

* Extremely low switching losses

* Low IRM-values

* Soft recovery behaviour

APPLICATIONS

* Antiparallel diode for high frequency

switching devices

* Antisaturation diode

* Snubber diode

* Free wheeling diode in converters

and motor control circuits

* Rectifiers in switch mode power

supplies (SMPS)

* Inductive heating

* Uninterruptible power supplies (UPS)

* Ultrasonic cleaners and welders

ADVANTAGES

* Avalanche voltage rated for reliable

operation

* Soft reverse recovery for low

EMI/RFI

* Low IRM reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating

switch

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