HUR6040(2008) Ver la hoja de datos (PDF) - Sirectifier Electronics
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HUR6040
(Rev.:2008)
(Rev.:2008)
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
Sirectifier Electronics
HUR6040 Datasheet PDF : 3 Pages
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HUR6030, HUR6040
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
160
A
120
IF
80
TVJ=150°C
TVJ=100°C
TVJ= 25°C
40
800
TVJ = 100°C
nC VR = 150V
600
Qr
400
IF = 120A
IF = 60A
IF = 30A
200
25
A
20
IRM
15
TVJ = 100°C
VR = 150V
IF = 120A
IF = 60A
IF = 30A
10
5
0
0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 1 Forward current IF versus VF
1.4
1.2
Kf
1.0
0.8
0.6
IRM
Qr
0
100
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
90
ns
trr 80
TVJ = 100°C
VR = 150V
IF = 120A
70
IF = 60A
IF = 30A
60
0
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
14
V
12
VFR
tfr
10
TVJ = 100°C
IF = 60A
0.85
uıs
0.80
tfr
VFR
0.75
8
0.70
6
0.65
0.4
0
40
80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
1
K/W
0.1
ZthJC
0.01
50
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
4
0.60
0 200 400 600 A80/u0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.324
2
0.125
3
0.201
0.005
0.0003
0.038
0.001
0.0001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.1
s
1
t
P3
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