HVL144AM(2006) Ver la hoja de datos (PDF) - Renesas Electronics

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HVL144AM
(Rev.:2006)

Silicon Epitaxial Trench Pin Diode for Antenna Switching

Renesas Electronics 

HVL144AM

Absolute Maximum Ratings

Item

Reverse voltage

Forward current

Power dissipation

Junction temperature

Storage temperature

VR

IF

Pd

Tj

Tstg

Symbol

Value

30

100

100

125

−55 to +125

(Ta = 25°C)

Unit

V

mA

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse current

IR

Forward voltage

VF

Capacitance

C

Forward resistance

rf

ESD-Capability *1

—

—

—

100

nA VR = 30 V

—

—

0.90

V

IF = 2 mA

—

—

0.43

pF VR = 1 V, f = 1 MHz

—

—

1.80

Ω

IF = 2 mA, f = 100 MHz

100

—

—

V

C = 200 pF, R = 0 Ω, Both forward

and reverse direction 1 pulse.

Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V

2. For TEFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip

part is considered as unquestioned. Please kindly consider soldering nature.

Rev.2.00 Jan 20, 2006 page 2 of 5

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