HY57V161610D Ver la hoja de datos (PDF) - Hynix Semiconductor
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HY57V161610D Datasheet PDF : 13 Pages
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HY57V161610D
COMMAND TRUTH TABLE
Command
Mode Register Set
No Operation
Bank Active
Read
Read with Auto precharge
Write
Write with Auto precharge
Precharge All Bank
Precharge selected Bank
Burst Stop
U/LDQM
Auto Refresh
Burst-READ-Single-WRITE
Self Refresh1
Entry
Exit
Precharge power
down
Entry
Exit
Clock Suspend
Entry
Exit
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM A0~A9
A10/
AP
BA
H
X
L
L
L
L
X
OP code
H
X
X
X
H
X
X
X
L
H
H
H
H
X
L
L
H
H
X
Row Address
V
H
X
L
H
L
H
X
Column
Address
L
H
V
H
X
L
H
L
L
X
Column
Address
L
H
V
H
X
H
X
L
L
H
L
X
X
L
V
H
X
L
H
H
L
X
X
H
X
V
X
H
H
L
L
L
H
X
X
H
X
L
L
L
L
X
A9 Pin High
(Other Pins OP code)
H
L
L
L
L
H
X
H
X
X
X
X
L
H
X
L
H
H
H
H
X
X
X
H
L
X
L
H
H
H
X
H
X
X
X
L
H
X
L
H
H
H
H
X
X
X
H
L
X
L
V
V
V
X
L
H
X
X
Note :
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high.
2. X=Do not care, L=Low, H=High, BA=Bank Address, RA= Row Address, CA=Column Address, Opcode=Operand Code,
NOP=No Operation.
Note
Rev. 4.0/Aug. 02
12
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