HY57V161610ET-7I Ver la hoja de datos (PDF) - Hynix Semiconductor

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HY57V161610ET-7I

2 Banks x 512K x 16 Bit Synchronous DRAM

Hynix Semiconductor 

CAPACITANCE (TA=25°C, f=1MHz)

Parameter

Input capacitance

Data input / output capacitance

Pin

CLK

A0 ~ A10, BA

CKE, CS, RAS, CAS, WE, UDQM, LDQM

DQ0 ~ DQ15

OUTPUT LOAD CIRCUIT

Output

Vtt=1.4V

RT=250 Ω

30pF

Output

HY57V161610ET-I

Symbol

Min

Max

Unit

CI1

2.5

4

pF

CI2

2.5

5

pF

CI/O

4

6.5

pF

30pF

DC Output Load Circuit

AC Output Load Circuit

DC CHARACTERISTICS I (TA=-40°C to 85°C)

Parameter

Symbol

Min.

Max

Power Supply Voltage

VDD

3.0

3.6

Input leakage current

IL

-1

1

Output leakage current

IO

-1

1

Output high voltage

VOH

2.4

-

Output low voltage

VOL

-

0.4

Note :

1.VDD(min) is 3.15V when HY57V161610ET-7I operates at CAS latency=2 and tCK2=8.9ns.

2.VDD(min) of HY57V161610ET-5I/55I is 3.15V

3.VIN = 0 to 3.6V, All other pins are not under test = 0V

4.DOUT is disabled, VOUT=0 to 3.6V

Rev. 0.1 / Nov. 2003

Unit

Note

V

1, 2

uA

3

uA

4

V

IOH = -4mA

V

IOL =+4mA

5

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