Q67040-S4513 Ver la hoja de datos (PDF) - Unspecified

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Q67040-S4513

Low Loss IGBT in Trench and Fieldstop technology

Unspecified 

Preliminary

TrenchStoP Series

IGW08T120

td(off)

100ns tf

td(on)

10ns

tr

td(off)

tf

100 ns

td(on)

10 ns

tr

1ns

5A

10A

15A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, RG=81Ω,

Dynamic test circuit in Figure E)

1 ns

5Ω

50Ω

100Ω 150Ω 200Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, IC=8A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

tr

10ns

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=8A, RG=81Ω,

Dynamic test circuit in Figure E)

7V

6V

5V

max.

typ.

4V

min.

3V

2V

1V

0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.3mA)

Power Semiconductors

6

Preliminary / Rev. 1 Sep-03

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