IKW25T120(2008) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW25T120
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKW25T120

15V

Ciss

1nF

240V

960V

10V

100pF

Coss

Crss

5V

0V

0nC

50nC 100nC 150nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=25 A)

200nC

10pF

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

15µs

10µs

5µs

0µs

12V

14V

16V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ=25°C)

200A

150A

100A

50A

0A

12V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE ≤ 600V, Tj ≤ 150°C)

Power Semiconductors

10

Rev. 2.2 Sep 08

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