IKW25T120(2008) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW25T120
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKW25T120

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

Symbol

RthJC

RthJCD

RthJA

Conditions

Max. Value

Unit

0.65

K/W

1.0

40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Integrated gate resistor

Symbol

Conditions

V(BR)CES

VCE(sat)

VF

VGE(th)

ICES

VGE=0V, IC=500µA

VGE = 15V, IC=25A

Tj=25°C

Tj=125°C

Tj=150°C

VGE=0V, IF=25A

Tj=25°C

Tj=125°C

Tj=150°C

IC=1mA,

VCE=VGE

VCE=1200V,

VGE=0V

Tj=25°C

Tj=150°C

IGES

gfs

RGint

VCE=0V,VGE=20V

VCE=20V, IC=25A

min.

1200

-

-

-

-

-

-

5.0

-

-

-

-

Value

typ.

-

1.7

2.0

2.2

1.7

1.7

1.7

5.8

-

-

-

16

8

Unit

max.

-V

2.2

-

-

2.2

-

-

6.5

mA

0.25

2.5

600 nA

-S

Ω

Power Semiconductors

3

Rev. 2.2 Sep 08

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